RN1202 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

RN1201~RN1206

2001-06-07

Electrical Characteristics (Ta = 25

°°°°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

―

VCB = 50V, IE = 0

―

100

Collector cut-off current

RN1201~1206

ICEO

―

VCE = 50V, IB = 0

―

500

RN1201

―

0.82

―

1.52

RN1202

―

0.38

―

0.71

RN1203

―

0.17

―

0.33

RN1204

―

VEB = 10V, IC = 0

0.082

―

0.15

RN1205

―

0.078

―

0.145

Emitter cut-off current

RN1206

IEBO

―

VEB = 5V, IC = 0

0.074

―

0.138

RN1201

―

RN1202

―

RN1203

―

RN1204

―

RN1205

―

DC current gain

RN1206

hFE

―

VCE = 5V, IC = 10mA

―

Collector-emitter

saturation voltage

RN1201~1206

VCE (sat)

―

IC = 5mA,

IB = 0.25mA

―

0.1

0.3

RN1201

―

1.1

―

2.0

RN1202

―

1.2

―

2.4

RN1203

―

1.3

―

3.0

RN1204

―

1.5

―

5.0

RN1205

―

0.6

―

1.1

Input voltage (ON)

RN1206

VI (ON)

―

VCE = 0.2V, IC = 5mA

0.7

―

1.3

RN1201~1204

―

1.0

―

1.5

Input voltage (OFF)

RN1205~1206

VI (OFF)

―

VCE = 5V, IC = 0.1mA

0.5

―

0.8

Translation frequency

RN1201~1206

―

VCE =10V, IC = 5mA

―

250

―

MHz

Collector output

capacitance

RN1201~1206

Cob

―

VCB = 10V, IE = 0,

f = 1MHz

―

RN1201

―

3.29

4.7

6.11

RN1202

―

RN1203

―

15.4

28.6

RN1204

―

32.9

61.1

RN1205

―

1.54

2.2

2.86

Input Resistor

RN1206

―

3.29

4.7

6.11

kΩ

RN1201~1205

―

0.9

1.0

1.1

RN1205

―

0.0421 0.0468 0.0515

Resistor Ratio

RN1206

R1/R2

―

0.09

0.1

0.11

―

RN1202 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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