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2SA2018 Datasheet(PDF) 1 Page - Rohm |
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2SA2018 Datasheet(HTML) 1 Page - Rohm |
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1 / 3 page ![]() 2SA2018 / 2SA2030 / 2SA2119K Transistors Rev.A 1/2 Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 250mA At IC = 200mA / IB = 10mA Absolute maximum ratings (Ta=25 °C) Parameter Symbol VCBO VCEO PC Tstg Limits 15 12 150 −55 to +150 Unit V V mW °C °C Collector-base voltage Collector-emitter voltage Collector power dissipation Storage temperature IC ICP 500 1 ∗ mA A Collector current Tj 150 Junction temperature SMT3 300 VMT3 EMT3 ∗Single pulse, Pw=1ms External dimensions (Unit : mm) (1) Emitter (2) Base (3) Collector ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 0.1Min. 1.6 0.8 (2) (3) (1) Each lead has same dimensions Abbreviated symbol : BW 2SA2018 0.3Min. 2.8 1.6 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Each lead has same dimensions Abbreviated symbol : BW 2SA2119K (3) 1.2 0.8 0.2 0.2 (2) (1) (1) Base (2) Emitter (3) Collector ROHM : VMT3 Each lead has same dimensions Abbreviated symbol : BW 2SA2030 Electrical characteristics (Ta=25 °C) Parameter Collector-base breakdown voltage Symbol Min. Typ. Max. Unit Conditions BVCBO 15 −− VIC =10µA IC =1mA IE =10µA VCB =15V IC =200mA / IB=10mA VCE =2V / IC=10mA VCE =2V, IE=10mA, fT=100MHz VCB =10V, IE=0A, f=1MHz Collector-emitter breakdown voltage BVCEO 12 −− V Emitter-base breakdown voltage BVEBO 6 −− V Collector cutoff current ICBO −− 100 nA Collector-emitter saturation voltage VCE (sat) − 100 250 mV DC current transfer ratio hFE 270 − 680 − Transition frequency fT − 260 − MHz Output capacitance Cob − 6.5 − pF |
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