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2SA2018 Datasheet(PDF) 1 Page - Rohm

Part # 2SA2018
Description  Low frequency transistor
PDF  3 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SA2018 Datasheet(HTML) 1 Page - Rohm

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2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.A
1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching, for muting.
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ 250mA
At IC = 200mA / IB = 10mA
Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
PC
Tstg
Limits
15
12
150
−55 to +150
Unit
V
V
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Collector power dissipation
Storage temperature
IC
ICP
500
1
∗
mA
A
Collector current
Tj
150
Junction temperature
SMT3
300
VMT3
EMT3
∗Single pulse, Pw=1ms
External dimensions
(Unit : mm)
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
0.1Min.
1.6
0.8
(2)
(3)
(1)
Each lead has same dimensions
Abbreviated symbol : BW
2SA2018
0.3Min.
2.8
1.6
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol : BW
2SA2119K
(3)
1.2
0.8
0.2
0.2
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
2SA2030
Electrical characteristics
(Ta=25
°C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BVCBO
15
−−
VIC
=10µA
IC
=1mA
IE
=10µA
VCB
=15V
IC
=200mA / IB=10mA
VCE
=2V / IC=10mA
VCE
=2V, IE=10mA, fT=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-emitter breakdown voltage
BVCEO
12
−−
V
Emitter-base breakdown voltage
BVEBO
6
−−
V
Collector cutoff current
ICBO
−−
100
nA
Collector-emitter saturation voltage
VCE (sat)
−
100
250
mV
DC current transfer ratio
hFE
270
−
680
−
Transition frequency
fT
−
260
−
MHz
Output capacitance
Cob
−
6.5
−
pF


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