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39SF020 Datasheet(PDF) 9 Page - Silicon Storage Technology, Inc

Part # 39SF020
Description  2 Megabit (256K x 8) Multi-Purpose Flash
PDF  23 Pages
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

39SF020 Datasheet(HTML) 9 Page - Silicon Storage Technology, Inc

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© 1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
1
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9
10
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16
AC CHARACTERISTICS
TABLE 9: READ CYCLE TIMING PARAMETERS VCC = 4.5-5.5V
SST39SF020-70 SST39SF020-90
Symbol
Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
35
45
ns
TCLZ(1)
CE# Low to Active Output
0
0
ns
TOLZ(1)
OE# Low to Active Output
0
0
ns
TCHZ(1)
CE# High to High-Z Output
15
20
ns
TOHZ(1)
OE# High to High-Z Output
15
20
ns
TOH(1)
Output Hold from Address Change
0
0
ns
326 PGM T9.2
TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Byte Program time
30
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
0
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH (1)
WE# Pulse Width High
30
ns
TCPH (1)
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH (1)
Data Hold Time
0
ns
TIDA (1)
Software ID Access and Exit Time
150
ns
TSE
Sector Erase
10
ms
TSCE
Chip Erase
20
ms
Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
326 PGM T10.4
Note: CL = 100 pF for 90 ns, CL = 30 pF for 70 ns



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