DMV1500 datasheet(5/9 Pages) STMICROELECTRONICS

5 / 9 page

DMV1500M

5/9

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

δ=tp/T

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Tc=100°C

δ=0.5

Fig. 5-1: Non repetitive surge peak forward current

versus overload duration (damper diode).

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Tc=100°C

δ=0.5

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (modulation diode).

0.1

0.2

0.5

1.0

2.0

5.0

100

200

300

400

500

600

700

800

900

1000

dIF/dt(A/µs)

Qrr(nc)

IF= 6A

90% confidence

Tj=125°C

Fig. 6-1: Reverse recovery charges versus dIF/dt

(damper diode).

0.1

1.0

10.0

100.0

100

150

200

dIF/dt(A/µs)

Qrr(nC)

IF= 3A

90% confidence

Tj=125°C

Fig. 6-2: Reverse recovery charges versus dIF/dt

(modulation diode).

0.1

0.2

0.5

1.0

2.0

5.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

dIF/dt(A/µs)

IRM(A)

IF= 6A

90% confidence

Tj=125°C

Fig. 7-1: Reverse recovery current versus dIF/dt

(damper diode).

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