3DD15 datasheet(1/2 Pages) ISC

Part #	3DD15

Description	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

1

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

3DD15

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min.)

·DC Current Gain-

: hFE= 30~250(Min.)@IC= 2A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC= 2.5A

APPLICATIONS

·Designed for B&W TV horizontal output , regulated power

supply and power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation@TC=75℃

50

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

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