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BU120 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU120 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistors BU120 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 15 A IB Base Current-Continuous 3.0 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃/W |
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