BU508A-M datasheet(2/2 Pages) ISC

Part #	BU508A-M

Description	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 800V (Min)

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BU508A-M

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; IB= 0

800

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.3

ICES

Collector Cutoff Current

VCE= 1500V ; VBE= 0

IEBO

Emitter Cutoff Current

VEB= 6.0V ; IC= 0

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 5V

hFE-2

DC Current Gain

IC= 4A ; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V;

MHz

Switching times

Fall Time

IC= 4A , IB1= 0.8A; IB2= -1.6A

0.4

μs

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