BUF420 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUF420

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 20A; IB= 2A

0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 10A; IB= 1A

0.9

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 20A; IB= 2A

1.1

ICER

Collector Cutoff Current

VCE=VCEV; RBE= 5Ω

VCE=VCEV; RBE= 5Ω;TC=100℃

0.2

1.0

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V;TC=100℃

0.2

1.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

Switching Times; Resistive Load

Storage Time

IC= 10A; IB1= 0.5A; VCC= 50V;

VBB= -5V, RBB= 0.6Ω; L= 0.25mH

Vclamp= 400V

1.0

μs

Fall Time

0.05

μs

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