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CTL0036NS-R3 Datasheet(PDF) 3 Page - CT Micro International Corporation

Part # CTL0036NS-R3
Description  N-Channel Enhancement MOSFET
PDF  10 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CTL0036NS-R3 Datasheet(HTML) 3 Page - CT Micro International Corporation

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CT Micro
Rev 2
Proprietary & Confidential
Page 3
Jun, 2015
CTL0036NS-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= 250µA
60
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 60V, VGS = 0V
-
-
1
A
IGSS
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
-
-
±10
A
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = 10V, ID = 500mA
-
-
3
3
VGS = 4.5V, ID = 200mA
-
-
4
VGS(TH)
Gate-Source Threshold Voltage
VGS = VDS, ID =250µA
1.0
-
2.5
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = 25V ,
VGS = 0V,
f=1MHz
-
-
35
pF
COSS
Output Capacitance
-
-
10
CRSS
Reverse Transfer Capacitance
-
-
5
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = 30V , VGS = 10V,
RG = 150 ,
ID =200mA
RG = 10
-
-
20
ns
TD(OFF)
Turn-Off Delay Time
-
-
40
QG
Total Gate Charge
VDS = 15V , VGS = 4.5V,
ID = 200mA
-
-
0.8
nC



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