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CTL046PS02E-R3 Datasheet(PDF) 3 Page - CT Micro International Corporation

Part # CTL046PS02E-R3
Description  P-Channel Enhancement MOSFET
PDF  11 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CTL046PS02E-R3 Datasheet(HTML) 3 Page - CT Micro International Corporation

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CT Micro
Rev 2
Proprietary & Confidential
Page 3
Jun, 2015
CTL046PS02E-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= -250µA
-20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -16V, VGS = 0V
-
-
-1
µA
IGSS
Gate-Source Leakage Current
VGS =
±8V, VDS = 0V
-
-
±10
µA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = -4.5V, ID = -4.3A
-
26
37
m
3
VGS = -2.5V, ID = -2.5A
-
32
45
m
VGS = -1.8V, ID = -2.0A
-
44
66
m
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.5
-
-0.84
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = - 10V ,
VGS = 0V,
f=1MHz
-
1500
-
pF
COSS
Output Capacitance
-
220
-
CRSS
Reverse Transfer Capacitance
-
160
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = -10V , RG = 6
VGEN = - 4.3V , RL = 10
ID = -1.0A
-
6
-
ns
TR
Rise Time
-
13
-
TD(OFF)
Turn-Off Delay Time
-
86
-
TF
Fall Time
-
42
-
QG
Total Gate Charge
VDS = -10V , VGS = -4.5V,
ID = -4.3A
-
14
-
nC
QGS
Gate-Source Charge
-
2.1
-
QGD
Gate-Drain Charge
-
4.7
-



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