◎ SEMIHOW REV.A0, December 2014

 Repetitive Peak Off-State Voltage (V

 R.M.S On-State Current (I

 Average On-State Current (I

HSC106D/M

Silicon Controlled Rectifier

Dec 2014

General Description

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control, process

and remote control, and warning systems where reliability of

operation is important.

Symbol

Parameter

Value

Units

Repetitive Peak Off-State Voltage (Forward)

HSC106D

HSC106M

400

600

V

Repetitive Peak Off-State Voltage (Reverse)

HSC106D

HSC106M

400

600

V

R.M.S On-State Current (All conduction angles)

4.0

A

Average On-State Current

2.55

A

Surge On-State Current

20

A

Forward Peak Gate Power Dissipation

(Pulse Width

≤1.0μsec, Tc=80℃)

0.5

W

Forward Average Gate Power Dissipation

(Pulse Width

≤1.0μsec, Tc=80℃)

0.1

W

Reverse Peak Gate Voltage

6.0

V

Forward Peak Gate Current

(Pulse Width

≤1.0μsec, Tc=80℃)

0.2

A

Storage Temperature Range

-40 to +150

℃

Operating Junction Temperature

-40 to +110

℃

FEATURES

1. K

2. A

3. G

V

400V / 600 V

I

1.Cathode

Symbol

2.Anode

3.Gate

HSC106D/M

2

1

3

TO-126