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CTL0383NS-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation

Part # CTL0383NS-R3
Description  N-Channel Enhancement MOSFET
PDF  12 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CTL0383NS-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation

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CT Micro
Rev 1
Proprietary & Confidential
Page 1
Nov, 2013
CTL0383NS-R3
N-Channel Enhancement MOSFET
Package Outline
Schematic
Features
Drain-Source Breakdown Voltage VDSS
30 V
Drain-Source On-Resistance
RDS(ON) 48m
, at V
GS
= 10V, ID= 3.4A
RDS(ON) 54m
, at V
GS
= 4.5V, ID= 2.7A
RDS(ON) 75m
, at V
GS
= 2.5V, ID= 1.0A
Continuous Drain Current at TC=25℃ ID = 3.8A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CTL0383NS-R3 is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where low in-line power loss are needed in a very
small outline surface mount package.
Gate
Source
Drain
Gate
Drain
Source


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