CTL0432PS-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 2

Proprietary & Confidential

Page 3

Jun, 2015

CTL0432PS-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250µA

-20

IDSS

Drain-Source Leakage Current

VDS = -20V, VGS = 0V

-1

µA

IGSS

Gate-Source Leakage Current

VGS =

±8V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -10V, ID = -5.1A

VGS = -4.5V, ID = -4.5A

VGS = -2.5V, ID = -3.7A

VGS = -1.8V, ID = -1.7A

VGS(th)

Gate-Source Threshold Voltage

VGS = VDS, I ID =-250µA

-0.6

---

-1.5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VGS =0V,

934

COSS

Output Capacitance

VDS =-10V

93.7

CRSS

Reverse Transfer Capacitance

f=1MHz

30.3

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -10V ,

VGS = -10V,

RG = 1 ,

RL= 10 ,

36.1

Rise Time

21.7

TD(OFF)

Turn-Off Delay Time

59.4

Fall Time

Total Gate Charge

VDS = -10V ,

6.2

QGS

Gate-Source Charge

VGS = -2.5V,

2.8

QGD

Gate-Drain Charge

ID = -5.1A

2.3

CTL0432PS-R3 Datasheet(PDF) 3 Page - CT Micro International Corporation

CTL0432PS-R3 Datasheet(HTML) 3 Page - CT Micro International Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL