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2SC4742 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC4742 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 2 page ![]() 2SC4742 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage V CES 1500 V Emitter to base voltage V EBO 6V Collector current I C 6A Collector peak current I C(peak) 7A Collector surge current I C(surge) 16 A Collector power dissipation P C* 1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current I D 7A Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown voltage V (BR)EBO 6— — V I E = 400 mA, IC = 0 Collector cutoff current I CES — — 500 µA V CE = 1500 V, RBE = 0 DC current transfer ratio h FE —— 25 V CE = 5 V, IC = 1 A Collector to emitter saturation voltage V CE(sat) — — 2.0 V I C = 5 A, IB = 1.25 A Base to emitter saturation voltage V BE(sat) — — 1.5 V I C = 5 A, IB = 1.25 A C to E diode forward voltage V ECF — — 2.0 V I F = 6 A Fall time t f — — 0.4 µs I CP = 5 A, IB1 = 1 A, IB2 = –2 A |
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