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FM25V02A Datasheet(PDF) 13 Page - Cypress Semiconductor

Part # FM25V02A
Description  256-Kbit (32K 횞 8) Serial (SPI) F-RAM
PDF  23 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25V02A Datasheet(HTML) 13 Page - Cypress Semiconductor

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FM25V02A
Document Number: 001-90865 Rev. *F
Page 13 of 23
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –55
C to + 125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS ........–1.0 V to + 4.5 V
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
DC voltage applied to outputs
in HI-Z state ........................................ –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ........................................ + 260
C
DC output current (1 output at a time, 1s duration) .... 15 mA
Electrostatic discharge voltage
Human Body Model (JEDEC Std JESD22-A114-B) ................ 2 kV
Charged Device Model (JEDEC Std JESD22-C101-A)........... 500 V
Latch-up current .................................................... > 140 mA
Operating Range
Range
Ambient Temperature
(TA)
VDD
Industrial
–40
C to +85 C
2.0 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ[3]
Max
Unit
VDD
Power supply
2.0
3.3
3.6
V
IDD
VDD supply current
SCK toggling between VDD –
0.2 V and VSS, other inputs VSS
or VDD – 0.2 V. SO = Open.
fSCK = 40 MHz
–
–
2.5
mA
fSCK = 1 MHz
–
–
0.22
mA
ISB
VDD standby current
CS = VDD. All other inputs VSS or VDD.
–
90
150
A
IZZ
Sleep mode current
CS = VDD. All other inputs VSS or VDD.–
5
8
A
ILI
Input leakage current
(Except HOLD)
VSS < VIN < VDD
–1
–
+1
A
Input leakage current
(for HOLD)
–100
–
+1
A
ILO
Output leakage current
VSS < VOUT < VDD
–1
–
+1
A
VIH
Input HIGH voltage
0.7 × VDD
–VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOH1
Output HIGH voltage
IOH = –1 mA, VDD = 2.7 V.
2.4
–
–
V
VOH2
Output HIGH voltage
IOH = –100 AVDD – 0.2
–
–
V
VOL1
Output LOW voltage
IOL = 2 mA, VDD = 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 A–
–
0.2
V
Rin
[4]
Input resistance (HOLD)For VIN = VIL (max)
800
–
–
k
For VIN = VIH (min)
30
–
–
k
Notes
3. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested.
4. The input pull-up circuit is strong (30 k
) when the input voltage is above V
IH and weak (800 k) when the input voltage is below VIL.



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