D882 datasheet(1/1 Pages) ETC

Part #	D882

Description	TO-126 Plastic-Encapsulate Transistors

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YOUDA TRANSISTOR

D882

Si NPN TRANSISTOR

D882

DESCRIPTION AND FEATURES

*Collector-Emitter voltage: BVCBO= 40V

*Collector current up to 3A

*High hFE linearity

PIN CONFIGURATIONS

SYMBOL

1

Emitter

2

Collector

3

Base

ABSOLUTE MAXIMUM RATINGS

(Tamb=25

)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

BVCBO

40

V

Collector-Emitter Voltage

BVCEO

30

V

Emitter-Base Voltage

BVEBO

5

V

Tcase=25

10

W

Collector Dissipation

Tamb=25

PCM

1

W

DC

ICM

3

A

Collector Current

Pulse

Icp

7

A

Base Current

IB

0.6

A

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55

+150

ELECTRICAL CHARACTERISTICS

(Tamb=25

,all voltage referenced to GND Unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

VcB=30V, IE=0

100

nA

Emitter Cut-Off Current

IEBO

VEB=3V, IC=0

100

nA

hFE1

VcE=2V, IC=20mA

30

200

DC Current Gain

hFE2

VcE=2V, IC=1A

100

400

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=2A, IB=0.2A

0.3

0.5

V

Base-Emitter Saturation Voltage

VBE(sat)

Ic=2A, IB=0.2A

1.0

2.0

V

Current Gain Bandwidth Product

fT

VcE=5V, IC=0.1A

80

MHz

Output Capacitance

Cob

VcB=10V,

IE=0,f=1MHz

45

pF

CLASSIFICATION OF hFE

RANK

Q

P

E

RANGE

100

200

160

320

200

400

WuXi YouDa Electronics Co., Ltd

Add:

No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China

Tel:

86-510-5205117

86-510-5205108

Fax:

86-510-5205110

Website: www.e-youda.com

SHENZHEN OFFICE

Tel

86-755-83740369

13823533350

Fax

86-755-83741418

Ver

3.1

1 of 1

2004-9-20

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