IRL1104 datasheet(2/8 Pages) IRF

2 / 8 page

IRL1104

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.04

–––

V/°C

Reference to 25°C, ID = 1mA

–––

––– 0.008

VGS = 10V, ID = 62A

–––

––– 0.012

VGS = 4.5V, ID = 52A

VGS(th)

Gate Threshold Voltage

1.0

–––

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

–––

VDS = 25V, ID = 62A

–––

VDS = 40V, VGS = 0V

–––

250

VDS = 32V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -16V

Total Gate Charge

–––

ID = 62A

Qgs

Gate-to-Source Charge

–––

VDS = 32V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 4.5V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

VDD = 20V

Rise Time

–––

257

–––

ID = 62A

td(off)

Turn-Off Delay Time

–––

RG = 3.6Ω, VGS = 4.5V

Fall Time

–––

RD = 0.4Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

–––

3445 –––

VGS = 0V

Coss

Output Capacitance

–––

1065 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

270

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IDSS

Drain-to-Source Leakage Current

RDS(on)

Static Drain-to-Source On-Resis-

IGSS

Internal Drain Inductance

–––

4.5

–––

Internal Source Inductance

–––

7.5

–––

µA

Ω

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C, IS = 62A, VGS = 0V

trr

Reverse Recovery Time

–––

126

TJ = 25°C, IF = 62A

Qrr

Reverse Recovery Charge

–––

223

335

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

–––

416

–––

––– 104

Source-Drain Ratings and Characteristics

DD = 15V, starting TJ = 25°C, L = 0.18mH

RG = 25Ω, IAS =62A. (See Figure 12)

Calculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the

package refer to Design Tip # 93-4

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ISD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

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