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CLC5612IM Datasheet(PDF) 14 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # CLC5612IM
Description  Dual, High Output, Programmable Gain Buffer
PDF  18 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

CLC5612IM Datasheet(HTML) 14 Page - National Semiconductor (TI)

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Application Division (Continued)
Load Termination
The CLC5612 can source and sink near equal amounts of
current. For optimum performance, the load should be tied to
V
cm.
Driving Cables and Capacitive Loads
When driving cables, double termination is used to prevent
reflections. For capacitive load applications, a small series
resistor at the output of the CLC5612 will improve stability
and settling performance. The Frequency Response vs. C
L
plot, shown below in
Figure 10, gives the recommended
series resistance value for optimum flatness at various
capacitive loads.
Transmission Line Matching
One method for matching the characteristic impedance (Z
o)
of a transmission line or cable is to place the appropriate
resistor at the input or output of the amplifier.
Figure 11
shows typical inverting and non-inverting circuit configura-
tions for matching transmission lines.
Non-inverting gain applications:
•
Connect pin 2 as indicated in the table in the Closed Loop
Gain Selection section.
•
Make R
1,R2,R6 and R7 equal to Z0.
•
Use R
3 to isolate the amplifier from reactive loading
caused by the transmission line, or by parasitics
Inverting gain applications:
•
Connect R
3 directly to ground.
•
Make the resistors R
4,R6, and R7 equal to Z0.
•
Make R
5\Rg=Z0.
The input and output matching resistors attenuate the signal
by a factor of 2, therefore additional gain is needed. Use C
6
to match the output transmission line over a greater
frequency range. C
6 compensates for the increase of the
amplifier’s output impedance with frequency.
Power Dissipation
Follow these steps to determine the power consumption of
the CLC5612:
1. Calculate the quiescent (no-load) power: P
amp
=I
CC
(V
CC−VEE)
2. Calculate the RMS power at the output stage: P
0 =(V
CC-Vload)(Iload), where Vload and Iload are the RMS voltage
and current across the external load.
3. Calculate the total RMS power: P
t =Pamp +Po
The maximum power that the DIP and SOIC, packages can
dissipate at a given temperature is illustrated in
Figure 12.
The power derating curve for any CLC5612 package can be
derived by utilizing the following equation:
where T
amb = Ambient temperature (˚C)
θ
JA=Thermal resistance, from junction to ambient, for a
given package (˚C/W)
1
7
6
8
5
3
4
2
1k
Ω
1k
Ω
1k
Ω
1k
Ω
CLC5612
Vo
0.1
µF
6.8
µF
Vin
Rt
+
VCC
Note: Channel 2 not shown.
6.8
µF
0.1
µF
+
VEE
DS015001-47
FIGURE 9. Dual Supply, A
V = +2V/V Configuration
Frequency (Hz)
1M
10M
100M
Vo = 1Vpp
CL = 10pF
Rs = 49.9Ω
CL = 100pF
Rs = 17.4Ω
CL = 1000pF
Rs = 6.7Ω
CL
1k
Rs
+
-
1k
1k
DS015001-48
FIGURE 10. Frequency Response vs. C
L
1
7
6
8
5
3
4
2
1k
Ω
1k
Ω
1k
Ω
1k
Ω
CLC5612
Z0
R6
Vo
Z0
R4
R5
+
-
R3
Z0
R1
R2
V1
V2 +-
C6
R7
Note: Channel 2 not shown.
DS015001-49
FIGURE 11. Transmission Line Matching
DS015001-51
FIGURE 12. Power Derating Curve
www.national.com
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