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CLC5612IM Datasheet(PDF) 14 Page - National Semiconductor (TI) |
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CLC5612IM Datasheet(HTML) 14 Page - National Semiconductor (TI) |
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14 / 18 page ![]() Application Division (Continued) Load Termination The CLC5612 can source and sink near equal amounts of current. For optimum performance, the load should be tied to V cm. Driving Cables and Capacitive Loads When driving cables, double termination is used to prevent reflections. For capacitive load applications, a small series resistor at the output of the CLC5612 will improve stability and settling performance. The Frequency Response vs. C L plot, shown below in Figure 10, gives the recommended series resistance value for optimum flatness at various capacitive loads. Transmission Line Matching One method for matching the characteristic impedance (Z o) of a transmission line or cable is to place the appropriate resistor at the input or output of the amplifier. Figure 11 shows typical inverting and non-inverting circuit configura- tions for matching transmission lines. Non-inverting gain applications: • Connect pin 2 as indicated in the table in the Closed Loop Gain Selection section. • Make R 1,R2,R6 and R7 equal to Z0. • Use R 3 to isolate the amplifier from reactive loading caused by the transmission line, or by parasitics Inverting gain applications: • Connect R 3 directly to ground. • Make the resistors R 4,R6, and R7 equal to Z0. • Make R 5\Rg=Z0. The input and output matching resistors attenuate the signal by a factor of 2, therefore additional gain is needed. Use C 6 to match the output transmission line over a greater frequency range. C 6 compensates for the increase of the amplifier’s output impedance with frequency. Power Dissipation Follow these steps to determine the power consumption of the CLC5612: 1. Calculate the quiescent (no-load) power: P amp =I CC (V CC−VEE) 2. Calculate the RMS power at the output stage: P 0 =(V CC-Vload)(Iload), where Vload and Iload are the RMS voltage and current across the external load. 3. Calculate the total RMS power: P t =Pamp +Po The maximum power that the DIP and SOIC, packages can dissipate at a given temperature is illustrated in Figure 12. The power derating curve for any CLC5612 package can be derived by utilizing the following equation: where T amb = Ambient temperature (˚C) θ JA=Thermal resistance, from junction to ambient, for a given package (˚C/W) 1 7 6 8 5 3 4 2 1k Ω 1k Ω 1k Ω 1k Ω CLC5612 Vo 0.1 µF 6.8 µF Vin Rt + VCC Note: Channel 2 not shown. 6.8 µF 0.1 µF + VEE DS015001-47 FIGURE 9. Dual Supply, A V = +2V/V Configuration Frequency (Hz) 1M 10M 100M Vo = 1Vpp CL = 10pF Rs = 49.9Ω CL = 100pF Rs = 17.4Ω CL = 1000pF Rs = 6.7Ω CL 1k Rs + - 1k 1k DS015001-48 FIGURE 10. Frequency Response vs. C L 1 7 6 8 5 3 4 2 1k Ω 1k Ω 1k Ω 1k Ω CLC5612 Z0 R6 Vo Z0 R4 R5 + - R3 Z0 R1 R2 V1 V2 +- C6 R7 Note: Channel 2 not shown. DS015001-49 FIGURE 11. Transmission Line Matching DS015001-51 FIGURE 12. Power Derating Curve www.national.com 14 |
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