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CLC5632 Datasheet(PDF) 14 Page - National Semiconductor (TI) |
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CLC5632 Datasheet(HTML) 14 Page - National Semiconductor (TI) |
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14 / 19 page ![]() Application Division (Continued) Load Termination The CLC5632 can source and sink near equal amounts of current. For optimum performance, the load should be tied to V CM. Driving Cables and Capacitive Loads When driving cables, double termination is used to prevent reflections. For capacitive load applications, a small series resistor at the output of the CLC5632 will improve stability and settling performance. The Frequency Response vs. C L plot, shown below in Figure 10, gives the recommended series resistance value for optimum flatness at various ca- pacitive loads. Transmission Line Matching One method for matching the characteristic impedance (Z O) of a transmission line or cable is to place the appropriate resistor at the input or output of the amplifier. Figure 11 shows typical inverting and non-inverting circuit configura- tions for matching transmission lines. Non-Inverting gain applications: • Connect pin 2 as indicated in the table in the Closed Loop Gain Selection section. • Make R 1,R2,R6, and R7 equal to ZO. • Use R 3 to isolate the amplifier from reactive loading caused by the transmission line, or by parasitics. Inverting gain applications: • Connect R 3 directly to ground. • Make the resistors R 4,R6, and R7 equal to ZO. • Make R 5 \ Rg =ZO. The input and output matching resistors attenuate the signal by a factor of 2, therefore additional gain is needed. Use C6 to match the output transmission line over a greater fre- quency range. C6 compensates for the increase of the am- plifier’s output impedance with frequency. Power Dissipation Follow these steps to determine the power consumption of the CLC5632: 1. Calculate the quiescent (no-load) power: P amp =I CC (V CC−VEE) 2. Calculate the RMS power at the output stage: P O =(VCC −V load)(Iload), where Vload and Iload are the RMS voltage and current across the external load. 3. Calculate the total RMS power: P t =Pamp+PO The maxi- mum power that the DIP and SOIC, packages can dissipate at a given temperature is illustrated in Figure 12. The power derating curve for any CLC5632 package can be derived by utilizing the following equation: where T amb = Ambient temperature (˚C) θ JA = Thermal resistance, from junction to ambient, for a given package (˚C/W) Layout Considerations A proper printed circuit layout is essential for achieving high frequency performance. National provides evaluation boards for the CLC5632 (CLC730038-DIP, CLC730036-SOIC) and suggests their use as a guide for high frequency layout and as an aid for device testing and characterization. General layout and supply bypassing play major roles in high frequency performance. Follow the steps below as a basis for high frequency layout: • Include 6.8µF tantalum and 0.1µF ceramic capacitors on both supplies. • Place the 6.8µF capacitors within 0.75 inches of the power pins. • Place the 0.1µF capacitors less than 0.1 inches from the power pins. DS015003-48 FIGURE 10. Frequency Response vs. C L 1 7 6 8 5 3 4 2 1k Ω 1k Ω 1k Ω 1k Ω CLC5632 Z0 R6 Vo Z0 R4 R5 + - R3 Z0 R1 R2 V1 V2 +- C6 R7 Note: Channel 2 not shown. DS015003-49 FIGURE 11. Transmission Line Matching DS015003-51 FIGURE 12. Power Derating Curve www.national.com 14 |
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