RTQ035P02 datasheet(3/5 Pages) ROHM

3 / 5 page

RTQ035P02

Transistor

3/4

Electrical characteristic curves

Fig.1 Typical Transfer Characteristics

0.5

1.0

0.001

0.1

0.01

1.5

Gate

−Source Voltage : −VGS[V]

2.0

2.5

3.0

3.5

4.0

=125

−25

°C

VDS

=−10V

pulsed

Fig.2 Static Drain

−Source On−State

Resistance

0.1

100

1000

Drain Current

: −ID[A]

−4.0V

−4.5V

VGS=

−2.5V

vs.Drain Current

=25 C

pulsed

Fig.3 Static Drain

−Source On−State

Resistance

0.1

100

1000

Drain Current

: −ID[A]

vs.Drain Current

Ta=125

−25

VGS

=−4.5V

pulsed

°C

Fig.4 Static Drain

−Source On−State

Resistance

0.1

100

1000

Drain Current : -ID[A]

Ta=125

−25

vs.Drain

−Current

VGS

=−4V

pulsed

°C

Fig.5 Static Drain

−Source On−State

Resistance

0.1

100

1000

Drain Current

: −ID[A]

Ta=125

−25

vs.Drain

−Current

VGS

=−2.5V

pulsed

°C

0.5

1.0

1.5

Source

−Drain Voltage : −VSD[V]

Fig.6 Reverse Drain Current vs.

0.01

0.1

2.0

Ta=125

−25

Source-Drain Voltage

VGS=0V

pulsed

0.01

0.1

100

Drain

−Source Voltage : −VDS[V]

Fig.7 Typical Capactitance

100

10000

1000

vs.Drain

−Source Voltage

Ciss

Coss

Crss

=25 C

=1MHz

VGS

=0V

0.01

0.1

Drain Current

: −ID[A]

Fig.8 Switching Characteristics

1000

100

(off)

(on)

=25 C

VDD

=−15V

VGS

=−4.5V

=10Ω

pulsed

Fig.9 Dynamic Input Characteristics

012

Total Gate Charge

: Qg[nC]

210

=25 C

VDD

=−15V

=−3.5V

=10Ω

pulsed

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