BS107P

Document Number DS33012 Rev. 3 - 2

2 of 5

www.diodes.com

May 2015

© Diodes Incorporated

BS107P

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

200

V

Gate-Source Voltage

±20

V

Continuous Drain Current

120

mA

Pulsed Drain Current

2

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

500

mW

Thermal Resistance, Junction to Ambient

(Note 5)

200

°C/W

Thermal Resistance, Junction to Leads

(Note 6)

71

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. For a through-hole device mounted on the minimum recommended pad layout with 12mm lead length from the bottom of package to the single-sided

FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state.

6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the drain lead).

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

230



V

Zero Gate Voltage Drain Current





30

nA

Drain Cut-Off Current





1

µA

Gate-Source Leakage





±10

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0



3.0

V

Static Drain-Source On-Resistance (Note 7)



15

23

Ω



30

Forward Transconductance (Notes 7 & 9)

100





mS

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance





85

pF

f = 1.0MHz

Output Capacitance





20

Reverse Transfer Capacitance





7

Turn-On Delay Time (Note 8)





7

ns

Turn-On Rise Time (Note 8)





8

Turn-Off Delay Time (Note 8)





16

Turn-Off Fall Time (Note 8)





8

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

8. Switching characteristics are independent of operating junction temperature. Switching times are measured with 50

Ω source impedance and

<5ns rise time on a pulse generator.

9. For design aid only, not subject to production testing.