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IRF7341 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7341 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  HEXFET® Power MOSFET PD -91703 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. 02/24/99 Description l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching SO -8 VDSS = 55V RDS(on) = 0.050Ω IRF7341 www.irf.com 1 Parameter Max. Units VDS Drain- Source Voltage 55 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.7 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 3.8 A IDM Pulsed Drain Current 38 PD @TC = 25°C Power Dissipation 2.0 PD @TC = 70°C Power Dissipation 1.3 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V EAS Single Pulse Avalanche Energy 72 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance Absolute Maximum Ratings W D1 D1 D2 D2 G1 S2 G2 S1 Top V ie w 8 1 2 3 4 5 6 7 |
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