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NHS035C Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NHS035C
Description  INTELLIGENT POWER DEVICE
PDF  42 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NHS035C Datasheet(HTML) 5 Page - Renesas Technology Corp

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PD166028T1K Datasheet
3. Specification
R07DS1162EJ0200 Rev.2.00
Page 5 of 40
May 22, 2015
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Symbol
Rating
Unit
Test Condition
Vcc Voltage
VCC
28
V
Vcc Voltage at reverse
battery condition
-VCC
-16
V
RL=5.4Ω, t<2min,
RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ RGND=100Ω
GND Reverse current at
reverse battery condition
IGND(Rev)
200
mA
RL=5.4Ω, t<2min
Vcc voltage under Load
Dump condition
Vload dump
42
V
RI=1Ω, RL=5.4Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ,
RGND=100Ω, td=400ms
Load Current
IL
Self limited
A
Total power dissipation
for whole device (DC)
PD
2.16
W
Ta=85°C,
Device on 50mm×50mm×1.5mm epoxy PCB FR4
with 6 cm2 of 70 µm copper area
Voltage at IN pin
VIN
-2 ~ 16
V
DC
RIN=2kΩ
-16
At reverse battery condition, t<2min,
RIN=2kΩ, RSEN=2kΩ
IN pin current
IIN
10
mA
DC
Voltage at IS pin
VIS
VCC
V
DC
RIS=1kΩ
-16
V
At reverse battery condition, t<2min,
RL=5.4Ω, RIS=1kΩ
IS Reverse current at
reverse battery condition
IIS(Rev)
-30
mA
At reverse battery condition, t<2min,
RL=5.4Ω
Voltage at SEN pin
VSEN
-2 ~ 16
V
DC
RSEN=2kΩ
-16
At reverse battery condition, t<2min
RIN=2kΩ, RSEN=2kΩ
SEN pin current
ISEN
10
mA
DC
Channel Temperature
Tch
-40 to +150
°C
Storage Temperature
Tstg
-55 to +150
°C
ESD susceptibility
VESD
2000
V
HBM
AEC-Q100-002 std.
R=1.5kΩ, C=100pF
All pin
4000
IEC61000-4-2 std.
R=330Ω, C=150pF,
100nF at VCC and OUT
VCC, OUT
200
V
MM
AEC-Q100-003 std.
R=0Ω, C=200pF
Inductive load switch-off
energy dissipation single
pulse
EAS
35
mJ
VCC=13.5V, Tch,start<150°C, RL=5.4Ω
Inductive load switch-off
energy dissipation
repetitive pulse
EAR
25
mJ
VCC=13.5V, Tch,start=85°C, RL=5.4Ω
Remark) All voltages refer to ground pin of the device



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