SPICE Device Model Si7858DP

Vishay Siliconix

www.vishay.com

Document Number: 71024

2

20-May-02

°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

µA

0.91

V

On-State Drain Current

a

1265

A

0.0019

0.0024

Drain-Source On-State Resistance

a

0.0031

0.0031

Ω

Forward Transconductance

a

142

130

S

Diode Forward Voltage

a

0.76

0.75

V

Dynamic

b

Total Gate Charge

42

40

Gate-Source Charge

6.7

6.7

Gate-Drain Charge

9.2

9.2

nC

Turn-On Delay Time

41

40

Rise Time

58

40

Turn-Off Delay Time

66

140

Fall Time

Ω

118

70

Source-Drain Reverse Recovery Time

µs

39

50

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.