DMN3053L

Document number: DS36883 Rev. 2 - 2

4 of 6

www.diodes.com

April 2014

© Diodes Incorporated

DMN3053L

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J



0

0.3

0.6

0.9

1.2

1.5

-50

-25

0

25

50

75

100

125 150

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T= 150°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

f = 1MHz

Q(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

2

4

6

8

1012

141618

V

= 15V

I= A

DS

D

4

V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

0.1

1

10

100

Rds(on)

Limited

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150C

T = 25C

V

= 4.5V

Single Pulse

DUT on 1 * MRP Board

J(MAX)

A

GS