DMN6140L datasheet(2/6 Pages) DIODES

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DMN6140L

Document number: DS35621 Rev. 4 - 2

2 of 6

www.diodes.com

December 2014

DMN6140L

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

20

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

1.6

1.2

t<10s

TA = +25°C

TA = +70°C

2.0

1.6

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

2.3

1.8

t<10s

TA = +25°C

TA = +70°C

2.9

2.3

Maximum Continuous Body Diode Forward Current (Note 6)

1.5

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.7

TA = +70°C

0.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

183

°C/W

t<10s

115

Total Power Dissipation (Note 6)

TA = +25°C

1.3

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

Thermal Resistance, Junction to Case

RJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

—

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

140

VGS = 10V, ID = 1.8A

115

170

VGS = 4.5V, ID = 1.3A

Forward Transfer Admittance

|Yfs|

—

2.2

—

VDS = 15V, ID = 1.8A

Diode Forward Voltage

VSD

—

0.75

1.0

VGS = 0V, IS = 0.45A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

315

—

VDS = 40V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistnace

—

0.65

—

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)

—

8.6

—

VDS = 30V, ID = 1.8A

Total Gate Charge (VGS = 5V)

—

4.1

—

Gate-Source Charge

Qgs

—

1.0

—

Gate-Drain Charge

Qgd

—

1.7

—

Turn-On Delay Time

tD(on)

—

2.6

—

VDS = 30V, VGS = 10V,

RG = 6.0ΩID = 1.8A

Turn-On Rise Time

—

3.6

—

Turn-Off Delay Time

tD(off)

—

16.3

—

Turn-Off Fall Time

—

2.7

—

Reverse Recovery Time

trr

—

16.8

—

IF = 1.8A, di/dt =100A/µs

Reverse Recovery Charge

Qrr

—

9.0

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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