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MBR10100 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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MBR10100 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() MBR10100 MBR10100 High Temperature Schottky Rectifier Diodes – Single Diode Hochtemperatur Schottky-Gleichrichterdioden – Einzeldiode Version 2015-01-14 Dimensions - Maße [mm] Nominal current Nennstrom 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 100 V Plastic case – Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A MBR10100 100 100 tbd < 0.8 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 125°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBT1090... SBT10100 TA = 25°C IFSM 135/150 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 80 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 4 3 1 Type Typ 5.08 ±0.1 0.8 ±0.2 1.3 ±0.1 10.1 ±0.3 Ø ±0.2 3.8 1.2 ±0.2 0.42±0.1 4.5 ±0.2 2.67 ±0.2 4 3 1 |
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