TVR4J,TVR4N

2002-09-18

1

TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR4J,TVR4N

High Speed Rectifier Applications (fast recovery)

· Plastic Mold Type.

==== 25°C)

Characteristics

Symbol

Rating

Unit

TVR4J

600

Repetitive peak

reverse voltage

TVR4N

1000

V

Average forward current (Ta

= 55°C )

1.2

A

Peak one cycle surge forward current

(non repetitive)

100 (50 Hz)

A

Junction temperature

-40 to 150

°C

Storage temperature range

-40 to 150

°C

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Peak forward voltage

¾

¾

1.2

V

Repetitive peak reverse current

¾

¾

10

mA

Reverse recovery time

¾

¾

20

ms

Thermal resistance (junction to ambient)

DC

¾

¾

80

°C/W

Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.

Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

3-4B1A

Weight: 0.47 g (typ.)

Type Code Lot No.

Cathode Mark

Color: Silver

Month (starting from alphabet A)

Year (last number of the christian era)

Code

Type

VR4J

TVR4J

VR4N

TVR4N