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2SA935 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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2SA935 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page ![]() TO-92L Plastic-Encapsulate d Transistors 2SA935 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25 ℃) Collector current ICM : -0.7 A Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -50µA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO Ic= -2mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.5 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 µA DC current gain hFE(1) VCE=-3V, IC=-100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.4 V Transition frequency fT VCE=-10V, IC=-50mA 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82-180 120-270 180-390 Marking 1 2 3 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE Transys Electronics LI M ITE D |
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