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UN206 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN206 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 4 page ![]() 2 Small Signal Transistor Arrays UNA0206 s Electrical Characteristics (Ta=25±2˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO (NPN) VCB = 20V, IE = 0 1 µA (PNP) VCB = –20V, IE = 0 –1 Collector cutoff current ICER (NPN) VCE = 18V, RBE = 100kΩ 10 µA (PNP) VCE = –18V, RBE = 100kΩ –10 Collector to base voltage VCBO (NPN) IC = 10µA, IE = 0 20 V (PNP) IC = –10µA, IE = 0 –20 Collector to emitter voltage VCEO (NPN) IC = 1mA, IB = 0 18 V (PNP) IC = –1mA, IB = 0 –18 Emitter to base voltage VEBO (NPN) IE = 10µA, IC = 0 5 V (PNP) IE = –10µA, IC = 0 –5 Forward voltage (DC) VF IF = 1A 1.5 V Forward current transfer ratio hFE1 (NPN) VCE = 2V, IC = 0.5A* 90 360 (PNP) VCE = –2V, IC = – 0.5A* 90 360 Forward current transfer ratio hFE2 (NPN) VCE = 2V, IC = 1.5A* 50 (PNP) VCE = –2V, IC = – 1.5A* 50 Collector to emitter saturation voltage VCE(sat)1 (NPN) IC = 0.3A, IB = 10mA 0.2 V (PNP) IC = – 0.3A, IB = –10mA – 0.2 Collector to emitter saturation voltage VCE(sat)2 (NPN) IC = 0.7A, IB = 10mA 0.6 V (PNP) IC = – 0.7A, IB = –10mA – 0.6 Transition frequency fT (NPN) VCB = 6V, IE = 50mA, f = 200MHz 150 MHz (PNP) VCB = –6V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob (NPN) VCB = 6V, IE = 0, f = 1MHz 20 pF (PNP) VCB = –6V, IE = 0, f = 1MHz 40 *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE IC — VBE 0 0 160 20 60 100 140 40 120 80 0.6 0.5 0.4 0.3 0.2 0.1 Ambient temperature Ta (˚C) 0 0 –12 – 2 –10 –4 –8 –6 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5 Collector to emitter voltage VCE (V) Ta=25˚C – 8mA – 6mA – 4mA – 2mA –12mA –10mA IB= –14mA 0 – 3.0 – 2.5 – 2.0 –1.5 –1.0 – 0.5 Base to emitter voltage VBE (V) 0 – 2.4 – 0.4 – 2.0 – 0.8 –1.6 –1.2 VCE=–2V Ta=75˚C – 25˚C 25˚C |
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