Power Transistors

1

Publication date: January 2003

SJD00098BED

2SC2258

Silicon NPN triple diffusion planar type

For high breakdown voltage general amplification

■ Features

• High collector-emitter voltage (Base open) V

CEO

• High transition frequency f

T

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Emitter-base voltage (Collector open)

= 0.1 mA, I

C

= 07

V

Base-emitter voltage

1.2

V

Collector-emitter cutoff current

100

µA

(Resistor between B and E)

Forward current transfer ratio

40



= 50 V, I

C

= 5 mA

30

Collector-emitter saturation voltage

1.2

V

Transition frequency

100

MHz

Collector output capacitance

= 50 V, I

E

= 0, f = 1 MHz

3.0

4.5

pF

(Common base, input open circuited)

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

8.0

+0.5

–0.1

123

Note) *1: Without heat sink

*2 :With a 100

× 100 × 2 mm Al heat sink

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

250

V

Collector-emitter voltage (Base open)

250

V

Emitter-base voltage (Collector open)

7V

Collector current

100

mA

Peak collector current

150

mA

Collector power dissipation

1

W

2

Junction temperature

150

°C

Storage temperature

−55 to +150

°C