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J202 Datasheet(PDF) 1 Page - InterFET Corporation

Part # J202
Description  N-Channel Silicon Junction Field-Effect Transistor
PDF  1 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

J202 Datasheet(HTML) 1 Page - InterFET Corporation

  J202 Datasheet HTML 1Page - InterFET Corporation  
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B-54
01/99
J201, J202
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ201, SMPJ202
At 25°C free air temperature:
J201
J202
Process NJ16
Static Electrical Characteristics
Min
Typ
Max
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 40
– 40
V
IG = – 1µA, VDS = ØV
Gate Reverse Current
IGSS
– 100
– 100
pA
VGS = – 20V, VDS = ØV
Gate Operating Current
IG
– 10
– 10
pA
VDG = 20V, ID = IDSS(min)
Gate Source Cutoff Voltage
VGS(OFF)
– 0.3
– 1.5
– 0.8
– 4
V
VDS = 20V, ID = 10 nA
Drain Saturation Current (Pulsed)
IDSS
0.2
1
0.9
4.5
mA
VDSS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward
gfs
500
1000
µS
VDS = 20V, VGS = ØV
f = 1 kHz
Transconductance
Common Source Output Conductance
gos
1
3.5
µS
VDS = 20V, VGS = ØV
f = 1 kHz
Common Source Input Capacitance
Ciss
44
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Common Source Reverse
Crss
11
pF
VDS = 20V, VGS = ØV
f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input
¯eN
55
nV/
√Hz
VDS = 10V, VGS = ØV
f = 1 kHz
Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp
1/13/99 2:09 PM
Page B-54


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