DMN3032LE

Document number: DS36695 Rev. 2 - 2

4 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN3032LE

0

0.01

0.02

0.03

0.04

0.05

0.06

-50-25

0

25

50

75100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I= 5A

GS

D

V=

V

I = 10A

GS

D

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

10

100

1000

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f = 1MHz

0

2

4

6

8

10

02

4

6

8

10

12

Q(nC)

Figure 11 Gate Charge

V= 15V

I=

A

DS

D

5.8