N3018SS datasheet(2/6 Pages) DIODES

2 / 6 page

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

2 of 6

www.diodes.com

February 2012

DMN3018SSS

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±25

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = 25°C

TA = 70°C

7.3

5.7

t<10s

TA = 25°C

TA = 70°C

9.7

7.8

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = 25°C

TA = 70°C

5.5

4.3

t<10s

TA = 25°C

TA = 70°C

7.6

5.8

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

Maximum Body Diode continuous Current

2.5

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 4)

TA = 25°C

1.4

TA = 70°C

0.9

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

RθJA

°C/W

t<10s

°C/W

Total Power Dissipation (Note 5)

TA = 25°C

1.7

TA = 70°C

1.1

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 5)

RθJC

7.6

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

μA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

±10

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(th)

1.7

2.1

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

mΩ

VGS = 10V, ID = 10A

VGS = 4.5V, ID = 8.5A

Forward Transfer Admittance

|Yfs|

8.3

VDS = 5V, ID = 6.9A

Diode Forward Voltage

VSD

0.5

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss

697

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate resistance

1.47

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

6.0

VGS = 10V, VDS = 15V,

ID = 9A

Total Gate Charge (VGS = 10V)

13.2

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

1.8

Turn-On Delay Time

tD(on)

4.3

VDD = 15V, VGS = 10V,

RL = 15Ω,ID = 1A, RG = 6Ω

Turn-On Rise Time

4.4

Turn-Off Delay Time

tD(off)

20.1

Turn-Off Fall Time

4.1

Reverse Recovery Time

Trr

7.3

IF = 9A, di/dt = 500A/μs

Reverse Recovery Charge

Qrr

7.9

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

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