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LM4668LD Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM4668LD Datasheet(HTML) 4 Page - National Semiconductor (TI) |
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4 / 14 page ![]() Electrical Characteristics for the LM4668 (Note 1) (Continued) Note 8: Datasheets min/max specification limits are guaranteed by design, test, or statistical analysis. Note 9: Shutdown current is measured in a normal room environment. The SHUTDOWN pin should be driven as close as possible to GND for minimum shutdown current. Note 10: Please refer to “Under Voltage Protection” on page 8 under “General Features.” Typical Performance Characteristics THD+N vs Frequency V DD = 9V, RL =8 Ω,P O =1W THD+N vs Frequency V DD = 12V, RL =8 Ω,P O =1W 20089106 20089107 THD+N vs Frequency V DD = 14V, RL =8 Ω,P O =1W THD+N vs Output Power R L =8 Ω,V DD = 9V, f = 1kHz 20089108 20089109 THD+N vs Output Power R L =8 Ω,V DD = 12V, f = 1kHz THD+N vs Output Power R L =8 Ω,V DD = 14V, f = 1kHz 20089110 20089111 www.national.com 4 |
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