SOT23 SILICON VARIABLE

CAPACITANCE DIODES

ISSUE 5 – JANUARY 1998

FEATURES

*

Close Tolerance C-V Characteristics

*

High Tuning Ratio

*Low I

R

Enabling Excellent Phase Noise Performance

(I

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

MAX

UNIT

Forward Current

200

mA

330

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

CONDITIONS

Reverse Breakdown

Voltage

V

BR

25

V

Reverse Voltage Leakage

I

R

0.2

10

nA

Temperature Coefficient

of Capacitance

η

0.03

0.04

%/°C

PART NO

Nominal Capacitance (pF)

V

Minimum

Q

@ V

f=50MHz

Capacitance Ratio

C

at f=1MHz

MIN

NOM

MAX

MIN

MAX

ZC830A

9.0

10.0

11.0

300

4.5

6.0

ZC831A

13.5

15.0

16.5

300

4.5

6.0

ZC832A

19.8

22.0

24.2

200

5.0

6.5

ZC833A

29.7

33.0

36.3

200

5.0

6.5

ZC834A

42.3

47.0

51.7

200

5.0

6.5

ZC835A

61.2

68.0

74.8

100

5.0

6.5

ZC836A

90.0

100.0

110.0

100

5.0

6.5

Note:

No suffix

±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)

Spice parameter data is available upon request for this device

ZC830/A/B

to

ZC836/A/B

1

3

2

SOT23

1

3