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DMP2002UPS Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMP2002UPS Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 7 page ![]() POWERDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192 Rev. 4 - 2 3 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP2002UPS Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.5 — -1.4 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — 1.3 1.9 m VGS = -10V, ID = -25A — 1.5 2.4 VGS = -4.5V, ID = -20A — 2 3.8 VGS = -2.5V, ID = -15A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 12826 — pF VDS = -10V, VGS = 0V f = 1MHz Output Capacitance Coss — 2547 — Reverse Transfer Capacitance Crss — 1924 — Gate Resistance RG 0.9 4.2 6.6 VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg — 476 585 nC VDS = -10V, ID = -20A Total Gate Charge (VGS = -4.5V) Qg — 228 282 Gate-Source Charge Qgs — 24.8 — Gate-Drain Charge Qgd — 61.9 — Turn-On Delay Time tD(ON) — 14.2 28 ns VDD = -10V, VGEN = -4.5V, RGEN = 1Ω, ID = -10A Turn-On Rise Time tR — 35.4 70 Turn-Off Delay Time tD(OFF) — 361 578 Turn-Off Fall Time tF — 224 358 BODY DIODE CHARACTERISTICS Continuous Body Diode Forward Current (Note 5 & 8) IS — — -60 A TC = +25°C Pulse Diode Forward Current ISM — — -100 Diode Forward Voltage VSD — -0.58 -1.1 V VGS = 0V, IS = -5A Reverse Recovery Time (Note 7) tRR — 137 219 ns IF = -10A, di/dt = 100A/µs Reverse Recovery Charge (Note 7) Qrr — 221 332 nC Reverse Recovery Fall Time (Note 7) ta — 39 — ns Reverse Recovery Raise Time (Note 7) tb — 98 — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 8. Package limited. 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic V GS = -1.2V V GS = -1.3V V GS = -1.4V V GS = -2.0V V GS = -1.5V V GS = -4.5V 0 5 10 15 20 25 30 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic V DS = -5V -55oC 25oC 85oC 125oC 150oC |
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