Transistors

1

Publication date: February 2004

SJC00001CED

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SC1383, 2SC1384

■ Features

• Allowing supply with the radial taping

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

(1.27)

(1.27)

0.45

+0.2

–0.1

0.45

+0.2

–0.1

13

2

Unit: mm

1: Emitter

2: Collector

3: Base

EIAJ: SC-51

TO-92L-A1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

Q

R

S

85 to 170

120 to 240

170 to 340

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SA0683

−30

V

(Emitter open)

2SA0684

−60

Collector-emitter voltage 2SA0683

−25

V

(Base open)

2SA0684

−50

Emitter-base voltage (Collector open)

−5V

Collector current

−1A

Peak collector current

−1.5

A

Collector power dissipation

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage

2SA0683

−30

V

(Emitter open)

2SA0684

−60

Collector-emitter voltage

2SA0683

= −2 mA, I

B

= 0

−25

V

(Base open)

2SA0684

−50

Emitter-base voltage (Collector open)

−5V

Collector-base cutoff current (Emitter open)

= −20 V, I

E

= 0

− 0.1

µA

1

2

85

340



50

Collector-emitter saturation voltage

= −500 mA, I

B

= −50 mA

− 0.2

− 0.4

V

Base-emitter saturation voltage

− 0.85 −1.20

V

Transition frequency

200

MHz

Collector output capacitance

= −10 V, I

E

= 0, f = 1 MHz

20

30

pF

(Common base, input open circuited)

Note) The part numbers in the parenthesis show conventional part number.