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2SA830S Datasheet(PDF) 2 Page - Rohm |
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2SA830S Datasheet(HTML) 2 Page - Rohm |
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2 / 4 page  2SB852K / 2SA830S Transistors Rev.A 2/3 Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions VCB = −10V, IE=0A, f=1MHz fT − 200 − MHz VCE = −5V, IE=10mA, f=100MHz BVCBO −40 −− V IC = −100µA BVCES −32 −− V IC = −1mA BVEBO −6 −− V IE = −100µA ICBO −− −1 µAVCB= −24V IEBO −− −1 µAVEB= −4.5V VCE(sat) 5000 − −− IC = −200mA, IB= −0.4mA hFE −− −1.5 V VCE = −5V, IC= −0.1A Cob − 3 − pF ∗2 ∗1 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗1 Measured using pulse current. ∗2 Transition frequency of the device. Electrical characteristic curves 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta ( °C) Fig.1 Power dissipation curves 0 25 50 75 100 125 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Ground emitter propagation characteristisc 0 −2 −5 −10 −20 −50 −100 −200 −500 V CE = −6V 0 −1 −20 −40 −60 −80 −100 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Ground emitter output characteristics 0 Ta=25 °C IB=0 −2µA −3µA −4µA −5µA −6µA −7µA −8µA −9µA −10µA −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 100000 20000 10000 2000 1000 200 100 500 5000 50000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Ta=25 °C VCE= −3V −5V −5 −10 −20 −50 −100 −200 −500 −1000 −2000 20000 10000 2000 1000 500 5000 50000 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) VCE= −5V Ta=100 °C 25° C −55 °C −5 −10 −20 −50 −100 −200 −500 −1000 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current IC/IB=500 Ta= −55°C 100 °C 25 °C |
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