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2SD1963 Datasheet(PDF) 2 Page - Rohm |
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2SD1963 Datasheet(HTML) 2 Page - Rohm |
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2 / 3 page ![]() 2SB1308 Transistors Rev.A 2/2 Packaging specifications and hFE Marking Code Package MPT3 2SB1308 PQR BF ∗ Basic ordering unit (pieces) hFE T100 1000 Type ∗ Denotes hEF Electrical characteristic curves Fig.2 DC current gain vs. collector current COLLECTOR CURRENT : IC (A) VCE = −2V −1m −5m −0.01 −0.05 −1 −2 −5 −10 −2m 100 200 500 1000 2000 5000 50 20 10 5 −0.02 −0.1 −0.5 −0.2 25 °C −25 °C Ta =100 °C Fig.3 Collector-emitter saturation voltage vs. collector current Ta= 100° C −25°C 25 °C lC/lB=40 COLLECTOR CURRENT : IC (A) −1 −2 −5 −10 −0.01−0.02 −0.1 −0.2 −0.5 −0.05 −2m −5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5 Fig.1 Grounded emitter propagation characteristics BASE TO EMITTER VOLTAGE : VBE (V) 0 −1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 −1m −2m −5m −0.01 −0.02 −0.2 −0.1 −0.05 −0.5 −1 −2 −10 −5 VCE = −2V 25 °C −25 °C Ta =100 °C |
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