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IRF351 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IRF351
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF351 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF351 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF351 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRF351
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
350
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(ON)
Drain-Source
On-stage Resistance
VGS= 10V; ID= 8.0A
0.3
Ω
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 350V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF= 15A; VGS= 0
1.6
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
2000
3000
pF
Coss
Output Capacitance
400
600
pF
Crss
Reverse Transfer Capacitance
100
200
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=180V,ID=8.0A
VGS=10V,RGEN=4.7Ω
RGS=4.7Ω
35
ns
Tr
Rise Time
65
ns
Td(off)
Turn-off Delay Time
150
ns
Tf
Fall Time
75
ns
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