01/99

B-5

2N3954, 2N3955, 2N3956

N-Channel Dual Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage

– 50 V

Gate Current

50 mA

Total Device Power Dissipation (each side)

250 mW

@ 85°C Case Temperature (both sides)

500 mW

Power Derating (both sides)

4.3 mW/°C

TOÐ71 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source, 2 Drain, 3 Gate,

5 Source, 6 Drain, 7 Gate

At 25°C free air temperature:

2N3954

2N3955

2N3956

Process NJ16

Static Electrical Characteristics

Min

Max

Min

Max

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

– 50

– 50

– 50

V

Gate Reverse Current

– 100

– 100

– 100

pA

– 500

– 500

– 500

nA

Gate Operating Current

– 50

– 50

– 50

pA

– 250

– 250

– 250

nA

Gate Source Voltage

– 4.2

– 4.2

– 4.2

V

– 0.5

– 4

– 0.5

– 4

– 0.5

– 4

V

Gate Source Cutoff Voltage

– 1

– 4.5

– 1

– 4.5

– 1

– 4.5

V

Gate Source Forward Voltage

222

V

Drain Saturation Current (Pulsed)

0.5

5

0.5

5

0.5

5

mA

Dynamic Electrical Characteristics

Common Source Forward

1000

3000

1000

3000

1000

3000

µS

f = 1 kHz

Transconductance

1000

1000

1000

µS

f = 200 MHz

Common Source Output Capacitance

35

35

35

µS

f = 1 kHz

Common Source Input Capacitance

444

pF

f = 1 MHz

Drain Gate Capacitance

1.5

1.5

1.5

pF

f = 1 MHz

Common Source Reverse

1.2

1.2

1.2

pF

f = 1 MHz

Transfer Capacitance

Noise Figure

NF

0.5

0.5

0.5

dB

f = 100 Hz

Differential Gate Current

101010

nA

Saturation Drain Current Ratio

1

0.95

1

0.95

1

Differential Gate Source Voltage

510

15

mV

Differential Gate Source Voltage

0.8

2

4

mV/°C

to = – 55°C

with Temperature

∆T

1

2.5

5

mV/°C

to = +125°C

Transconductance Ratio

0.97

1

0.97

1

0.97

1

f = 1 kHz

¥ Low and Medium Frequency

Differential Amplifiers

¥ High Input Impedance

Amplifiers

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/14/99 11:29 AM

Page B-5