Power Transistors

1

Publication date: February 2003

SJD00095BED

2SC1847

Silicon NPN epitaxial planar type

For medium output power amplification

Complementary to 2SA0886

■ Features

• Output of 4 W can be obtained by a complementary pair with

2SA0886

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

= 2 mA, I

B

= 040

V

Collector-base cutoff current (Emitter open)

µA

Collector-emitter cutoff current (Base open)

100

µA

Emitter-base cutoff current (Collector open)

= 5 V, I

C

= 010

µA

80

220



Collector-emitter saturation voltage

1

V

Base-emitter saturation voltage

= 2 A, I

B

= 0.2 A

1.5

V

Transition frequency

150

MHz

Collector output capacitance

35

pF

(Common base, input open circuited)

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

8.0

+0.5

–0.1

123

Rank

Q

R

80 to 160

120 to 220

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

40

V

Emitter-base voltage (Collector open)

5V

Collector current

1.5

A

Peak collector current

3A

Collector power dissipation

1.2

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C