KSC5025 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

KSC5025

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= 5A ;IB1= -IB2= 2A;

L= 500μH,Clamped

500

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

800

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; RBE= ∞

500

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

1.5

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

μA

hFE-1

DC Current Gain

IC= 1.2A; VCE= 5V

hFE-2

DC Current Gain

IC= 6A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

160

Current-Gain—Bandwidth Product

IC= 1.2A ; VCE= 10V

MHz

Switching Times; Resistive Load

ton

Turn-On Time

IC= 7A; IB1= 1.4A; IB2= -2.8A;

VCC=200V; RL= 28.6Ω

0.5

μs

Storage Time

3.0

μs

Fall Time

0.3

μs



hFE-1 Classifications

15-30

20-40

30-50

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