MBR2030CT datasheet(1/2 Pages) ISC

Part #	MBR2030CT

Description	Schottky Barrier Rectifier

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

Product Specification

isc website：www.iscsemi.cn

1

Schottky Barrier Rectifier

MBR2030CT

FEATURES

·

Dual Rectifier Conduction, Positive Center Tap

·

Metal Silicon Junction, Majority Carrier Conduction

·

Low Power Loss/High Efficiency

·

High Current Capability, Low Forward Voltage Drop

·

High Surge Capacity

·

Guarding for Overvoltage protection

·

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

MECHANICAL CHARACTERISTICS

·

Case: Epoxy, Molded

·

Finish: All External Surfaces Corrosion Resistant and

Terminal Leads are Readily Solderable

·

High Temperature Soldering Guaranteed:

250℃ Max. for 10 Seconds

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

30

V

VR(RMS)

RMS Reverse Voltage

21

V

IF(AV)

Average Rectified Forward Current

TC= 125℃

20

A

IFSM

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed

on rated load conditions

150

A

IRRM

Peak Repetitive Reverse Current

(2.0μs, 1.0kHz)

1.0

A

TJ

Junction Temperature

-65~150

℃

Tstg

Storage Temperature Range

-65~175

℃

dv/dt

Voltage Rate of Change (Rated VR)

1000

V/μs

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MBR2030CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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