MJH11017 datasheet(1/2 Pages) ISC

Part #	MJH11017

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

1

isc website：www.iscsemi.cn

isc Silicon PNP Darlington Power Transistor

M

JH11017

DESCRIPTION

·

High DC Current Gain-

: hFE = 400(Min)@ IC= -10A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -150V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.5V(Max)@ IC= -10A

= -4.0V(Max)@ IC= -15A

·

Complement to Type MJH11018

APPLICATIONS

·

Designed for general purpose amplifiers ,low frequency

switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-30

A

IB

Base Current- Continuous

-0.5

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃

/W

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