OBSOLETE

DS16F95, DS36F95

www.ti.com

SNLS392D – JUNE 1998 – REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Storage Temperature Range

−65°C to +175°C

Lead Temperature (Soldering, 60 sec.)

300°C

CDIP Package

1300 mW

SOIC Package

735 mW

Supply Voltage

7.0V

Input Voltage (Bus Terminal)

+15V/

−10V

Enable Input Voltage

5.5V

(1)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that

the devices should be operated at these limits. The tables of Electrical Characteristics provide conditions for actual device operation.

(2)

Specifications for the 883 version of this product are listed separately on the following pages.

(3)

Derate CDIP package 8.7 mW/°C above 25°C.Derate SOIC package 5.88 mW/°C above 25°C.

Recommended Operating Conditions

Min

Typ

Max

Units

DS36F95

4.75

5.0

5.25

V

DS16F95

4.50

5.0

5.50

V

−7.0

+12

V

±12

V

Driver

−60

mA

Receiver

−400

μA

Driver

60

mA

Receiver

16

mA

DS36F95

0

+25

+70

°C

DS16F95

−55

+25

+125

°C

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Product Folder Links: DS16F95 DS36F95