DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

2 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMP2200UFCL

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 6)

-1.7

-1.2

A

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

0.66

W

(Note 6)

1.58

W

Thermal Resistance, Junction to Ambient

(Note 5)

193

°C/W

(Note 6)

80

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-1

µA

Gate-Body Leakage

⎯

⎯

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4

⎯

-1.2

V

Static Drain-Source On-Resistance

⎯

153

220

260

360

200

290

390

650

m

Ω

Diode Forward Voltage (Note 7)

⎯

⎯

-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

184

—

pF

f = 1.0MHz

Output Capacitance

—

25.8

—

pF

Reverse Transfer Capacitance

—

18.6

—

pF

Total Gate Charge

—

2.2

—

nC

Gate-Source Charge

—

0.4

—

nC

Gate-Drain Charge

—

0.5

—

nC

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

—

9.8

—

ns

Turn-Off Delay Time

—

23

—

ns

Turn-On Rise Time

—

87

—

ns

Turn-Off Fall Time

—

41

—

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.