DS485

SNLS122C – JULY 1998 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

+12V

Enable Input Voltage (RE*, DE)

Driver Input Voltage (DI)

Driver Output Voltage (A, B)

−14V to +14V

Receiver Input Voltage (A, B)

−14V to +14V

Receiver Output Voltage (RO)

Maximum Package Power Dissipation @ +25°C

SOIC Package

1.19W

PDIP Package

0.74W

Derate SOIC Package 9.5 mW/°C above +25°C

Derate PDIP Package 6.0 mW/°C above +25°C

Maximum Package Power Dissipation @ +70°C

SOIC Package

0.76W

PDIP Package

0.47W

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range

Soldering, 4 sec

+260°C

ESD (HBM)

≥2 kV

(1)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(2)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that

the devices should be operated at these limits. The table of ELECTRICAL CHARACTERISTICS specifies conditions of device operation.

RECOMMENDED OPERATING CONDITIONS

Min

Typ

Max

Units

+4.75

+5.0

+5.25

V

DS485

0

+25

+70

°C

DS485T

−40

+25

+85

°C

Bus Common Mode Voltage

−7

+12

V

2

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