LF198QML

SNOSAH9A – FEBRUARY 2005 – REVISED MARCH 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Typical Connection and Performance Curve

Figure 3.

Figure 4. Acquisition Time

Functional Diagram

2

Submit Documentation Feedback

Copyright © 2005–2013, Texas Instruments Incorporated

Product Folder Links: LF198QML